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| polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1107 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 40 Watts Gemini Package Style AK HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 100 Watts Junction to Case Thermal Resistance 1.5 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V o -65 o C to 150o C 4A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficiency Load Mismatch Toleranc MIN 11 55 TYP 40WATTS OUTPUT ) MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz VSWR ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation Curren Common Source Input Capacitanc Common Source Feedback Capacitanc Common Source Output Capacitanc 1 1 1 6 40 5 30 MIN 65 1 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.05 A, Vds = 28.0 V, Vds = 0 V, Ids = 0.1 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 4 A Vgs = 20V, Vds = 10V Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com F1107 POUT VS PIN GRAPH F1107 POUT vs PIN 60 CAPACITANCE VS VOLTAGE F1J 1 DIE CAPACITANCE 17 16 IDQ=0.4A Freq=400 MHz Vds=28.0V 1000 50 GAIN 15 40 Efficiency = 55% 30 14 13 100 Ciss Coss 20 POUT 12 10 Crss 10 11 10 0 0.5 1 1.5 2 2.5 PIN IN WATTS 0 3 3.5 4 4.5 5 1 0 5 10 15 VDS IN VOLTS 20 25 30 POUT GAIN IV CURVE F1J 1 DIE IV CURVE 9 8 7 6 1 5 4 3 2 1 0 0 2 4 6 8 10 Vds in Volts ID AND GM VS VGS F1J 1 DIE GM & ID vs VGS 10 Id Gm 0.1 12 14 16 18 20 0.01 0 2 4 6 8 10 12 14 16 18 20 Vg = 2V Vg = 4V Vg = 6V Vg = 8V Vg = 10V Vg = 12V Vgs in Volts S11 AND S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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